the fair gds editor ExtractionDevice
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Device Extraction

The LayoutEditor can be used to generate a netlist from a layout. To do so any device part of the layout had to be detected as well its connection had to be calculated. The device detection is straight forward, if the schematic driven layout part of the LayoutEditor is used. In that case all device information is stored in the layout as properties of the cell reference to the cell representing the device. This information can be view with the PropertiesMode by pressing the little component symbol. The symbol is only be visible, if device information is present.

component_property.png

If a device is modified after the schematic driven layout or the layout is done by a other software or in case of parasitic devices, the required information to generate a netlist will not be correct or is even missing. In that case the device had to be extracted from the layout in a different way. The LayoutEditor includes methods to do so. The required method for each component is described with each component. Check/change it with the EditComponent. The extraction itself is call by ExtractComponent. Alternative a manual extraction can be performed by ExtractComponent(manual). In both ways new cells will be refered in the layout containing all required device information. With DeleteExtractedDevices previous extracted devices are removed from the layout. These automatic extracted method are available:

(device extraction was introduced with version 20130101)

C-parallelPlate

Parallel plate capacitors are detected and calculated. The capacitance area is the overlap of layerA and layerB.

Extraction Method Parameter

layerA

capacitors electrode layer 1

layerB

capacitors electrode layer 2

areaCap

area capacitance in F/m²

edgeCap

edge capacitance in F/m

layerContactA

connection layer for electrode 1, used for connector placement (optional)

layerContactB

connection layer for electrode 2, used for connector placement (optional)

layerPlaceA

layer used for connector 1 (optional)

layerPlaceB

layer used for connector 2 (optional)

ports

comma separated list of ports as used by the component, order: top, bottom

Device Parameter Values

$capSci

capacitance in scientific notation (e.g. 1.4e-5)

$capEng

capacitance in engineering notation (e.g. 140n)

C-nodeToGround

Calculates the capacitance of all shapes of an node to ground. Node of refered cell references without a connection to the current call are not calculated. However any shape connected to the current cell is considered. Shape on layers not listed with area or edge cap are not considered.

Extraction Method Parameter

areaCap[layerName1]

area capacitance in F/m²

edgeCap[layerName1]

edge capacitance in F/m

areaCap[layerName2]

area capacitance in F/m²

edgeCap[layerName2]

edge capacitance in F/m

...

ports

port as used by the component

Device Parameter Values

$capSci

capacitance in scientific notation (e.g. 1.4e-5)

$capEng

capacitance in engineering notation (e.g. 140n)

MOS-default

A typical 3 connector MOS transitor, optional layerRequiredWell and layerOutsideWell can be used to separate between NMOS and PMOS.

Extraction Method Parameter

layerPoly

poly layer

layerActive

active layer

layerContact

contact layer

layerRequiredWell

layer of a optionl required well

layerOutsideWell

layer of a well not covered by the component

ports

comma separated list of ports as used by the component, order:source,drain,gate

Device Parameter Values

$lengthSci

transitor length in scientific notation (e.g. 1.4e-5)

$lengthEng

transitor length in engineering notation (e.g. 140n)

$widthSci

transitor length in scientific notation (e.g. 1.4e-5)

$widthEng

transitor length in engineering notation (e.g. 140n)

$areaSourceSci

area of source contact in scientific notation

$areaSourceEng

area of source contact in engineering notation

$perimeterSourceSci

perimeter of source contact in scientific notation

$perimeterSourceEng

perimeter of source contact in engineering notation

$areaDrainSci

area of drain contact in scientific notation

$areaDrainEng

area of drain contact in engineering notation

$perimeterDrainSci

perimeter of drain contact in scientific notation

$perimeterDrainEng

perimeter of drain contact in engineering notation

(areaSourceSci, areaSourceEng, perimeterSourceSci, perimeterSourceEng, areaDrainSci, areaDrainEng, perimeterDrainSci and perimeterDrainEng were introduced with version 20141115)

BJT-vertical

Detects and extracts a typical vertical bipolar junction transistor. (introduced with version 20130203)

Extraction Method Parameter

layerBurried

layer of the burried conductor

layerContact

contact layer

layerDeep

layer of deep diffusion to contact burried layer

layerWell

layer of the basic well

layerDiffusion

layer of the diffusion of the emitter

ports

port as used by the component

Device Parameter Values

none

BJT-lateral

Detects and extracts a (parasitaric) lateral bipolar junction transistor. (introduced with version 20130203)

Extraction Method Parameter

layerBurried

layer of the burried conductor (basic)

layerContact

contact layer

layerDeep

layer of deep diffusion to contact burried layer

layerWell

layer of the emitter/collector well

maximalEmitterDistance

maximal distance of collector and emitter

ports

port as used by the component

Device Parameter Values

none

R-thinFilm

Calculates a thin film resistor. Resitive and connecting layer had to be specified. Resistance is calculated with finite differences. 2 connector and 3 connector resistor are supported. Resistors with more connector the resulting resistance between all connectors is extracted. Multi connections per connector are detected and full supported. (introduced with version 20130203)

Extraction Method Parameter

layerResistance

resistive layer

layerContact

connecting layer

rsquare

square resistance of the resistive layer

resolution

resolution of the finite differences calculation. Valuses between 0 and 100

ports

port as used by the component

Device Parameter Values

$resSci

resistance in scientific notation (e.g. 1.4e-5)

$resEng

resistance in engineering notation (e.g. 140n)

See also


CategoryTutorial


ExtractionDevice (last edited 2014-11-15 15:39:26 by JürgenThies)